Q. The external power efficiency of an injection laser with a GaAs is 13% having band gap energy of 1.64 eV. Determine external power efficiency.

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Q. In multimode injection lasers, the construction of current flow to the strip is obtained in structure by __________

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Q. What is the strip width of injection laser?

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Q. Some refractive index variation is introduced into lateral structure of laser.

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Q. Buried hetero-junction (BH) device is a type of _____________ laser where the active volume is buried in a material of wider band-gap and lower refractive index.

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Q. In Buried hetero-junction (BH) lasers, the optical field is confined within __________

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Q. A double-channel planar buried hetero-structure (DCP BH) has a planar active region, the confinement material is?

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Q. Problems resulting from parasitic capacitances can be overcome __________

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Q. Quantum well lasers are also known as __________

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Q. Quantum well lasers are providing high inherent advantage over __________

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Q. Strip geometry of a device or laser is important.

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Q. Better confinement of optical mode is obtained in __________

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Q. Multi-quantum devices have superior characteristics over __________

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Q. Dot-in-well device is also known as __________

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Q. A BH can have anything from a single electron to several electrons.

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Q. QD lasers have a very low threshold current densities of range __________

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Q. __________________ may be improved through the use of frequency-selective feedback so that the cavity loss is different for various longitudinal modes.

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Q. Device which apply the frequency-selective feedback technique to provide single longitudinal operation are referred to as ________________

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Q. Which of the following does not provide single frequency operation?

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Q. A method for increasing the longitudinal mode discrimination of an injection laser which is commonly used?

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