Q. __________________ may be improved through the use of frequency-selective feedback so that the cavity loss is different for various longitudinal modes.

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Q. Device which apply the frequency-selective feedback technique to provide single longitudinal operation are referred to as ________________

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Q. Which of the following does not provide single frequency operation?

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Q. A method for increasing the longitudinal mode discrimination of an injection laser which is commonly used?

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Q. Conventional cleaved mirror structures are difficult to fabricate with the cavity lengths below __________

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Q. In the given equation, corrugation period is given by lλᵦ/2Nₑ. If λᵦ is the Bragg wavelength, then what does ‘l’ stand for?

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Q. The first order grating (l=1) provide the strongest coupling within the device.

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Q. The semiconductor lasers employing the distributed feedback mechanism are classified in _________________ categories.

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Q. DBF-BH lasers exhibit low threshold currents in the range of ________________

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Q. Fabry-Perot devices with BH geometries high modulation speeds than DFB-BH lasers.

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Q. The InGaAsP/InP double channel planar DFB-BH laser with a quarter wavelength shifted first order grating provides a single frequency operation and incorporates a phase shift of ______________

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Q. The narrow line-width obtained under the CW operation for quarter wavelength shifted DFB laser is ________________

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Q. Line-width narrowing is achieved in DFB lasers by a strategy referred as _______________

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Q. _________________ is a technique used to render the non-conducting material around the active cavity by producing permanent defects in the implanted area.

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Q. The threshold temperature coefficient for InGaAsP devices is in the range of __________

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Q. The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as __________

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Q. Auger recombination can be reduced by using __________

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Q. High strain in strained structure should be incorporated.

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Q. The parameter that prevents carrier from recombination is __________

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Q. Determine the threshold current density for an AlGaAs injection laser with T₀=180k at 30°C.

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