Q. The first order grating (l=1) provide the strongest coupling within the device.

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Q. The semiconductor lasers employing the distributed feedback mechanism are classified in _________________ categories.

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Q. DBF-BH lasers exhibit low threshold currents in the range of ________________

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Q. Fabry-Perot devices with BH geometries high modulation speeds than DFB-BH lasers.

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Q. The InGaAsP/InP double channel planar DFB-BH laser with a quarter wavelength shifted first order grating provides a single frequency operation and incorporates a phase shift of ______________

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Q. The narrow line-width obtained under the CW operation for quarter wavelength shifted DFB laser is ________________

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Q. Line-width narrowing is achieved in DFB lasers by a strategy referred as _______________

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Q. _________________ is a technique used to render the non-conducting material around the active cavity by producing permanent defects in the implanted area.

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Q. The threshold temperature coefficient for InGaAsP devices is in the range of __________

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Q. The process where the energy released during the recombination of an electron-hole event getting transferred to another carrier is known as __________

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Q. Auger recombination can be reduced by using __________

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Q. High strain in strained structure should be incorporated.

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Q. The parameter that prevents carrier from recombination is __________

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Q. Determine the threshold current density for an AlGaAs injection laser with T₀=180k at 30°C.

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Q. The phenomenon occurring when the electron and photon population within the structure comes into equilibrium is known as __________

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Q. When a current pulse reaches a laser having parasitic capacitance after the initial delay time, that pulse will __________

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Q. Reducing delay time and ____________ are of high importance for lasers.

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Q. Dynamic line-width broadening under the direct modulation of injection current is known as __________

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Q. A particular characteristic or parameter that occurs during analog transmission of injection lasers is?

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Q. Intensity of output from semiconductor injection lasers leading to optical intensity noise is due to __________

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