Q. A particular laser structure is designed so that the active region extends the edges of devices.

View solution

Q. Gain guided laser structure are __________

View solution

Q. Laser modes are generally separated by few __________

View solution

Q. The spectral width of emission from the single mode device is __________

View solution

Q. Single longitudinal mode operation is obtained by __________

View solution

Q. A correct DH structure will restrict the vertical width of waveguide region is?

View solution

Q. The external power efficiency of an injection laser with a GaAs is 13% having band gap energy of 1.64 eV. Determine external power efficiency.

View solution

Q. In multimode injection lasers, the construction of current flow to the strip is obtained in structure by __________

View solution

Q. What is the strip width of injection laser?

View solution

Q. Some refractive index variation is introduced into lateral structure of laser.

View solution

Q. Buried hetero-junction (BH) device is a type of _____________ laser where the active volume is buried in a material of wider band-gap and lower refractive index.

View solution

Q. In Buried hetero-junction (BH) lasers, the optical field is confined within __________

View solution

Q. A double-channel planar buried hetero-structure (DCP BH) has a planar active region, the confinement material is?

View solution

Q. Problems resulting from parasitic capacitances can be overcome __________

View solution

Q. Quantum well lasers are also known as __________

View solution

Q. Quantum well lasers are providing high inherent advantage over __________

View solution

Q. Strip geometry of a device or laser is important.

View solution

Q. Better confinement of optical mode is obtained in __________

View solution

Q. Multi-quantum devices have superior characteristics over __________

View solution

Q. Dot-in-well device is also known as __________

View solution