Q. ____________ are widely used in first generation systems of optical fiber communication.

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Q. Silicon has indirect band gap energy of __________________

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Q. Which of the following detector is fabricated from semiconductor alloys?

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Q. Silicon photodiodes provide high shunt conductance.

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Q. P-n photodiode is forward biased.

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Q. The depletion region must be ____________ to allow a large fraction of the incident light to be absorbed in the device(photodiode).

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Q. The process of excitation of an electron from valence band to conduction band leaves an empty hole in the valence band and is called as ____________

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Q. __________________ always leads to the generation of a hole and an electron.

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Q. The electron hole pairs generated in a photodiode are separated by the ____________

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Q. Electric field in the depletion region should be high.

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Q. The photocurrent of an optical detector should be __________

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Q. How many types of optical detectors are available?

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Q. The absorption of photons in a photodiode is dependent on __________

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Q. The photocurrent in a photodiode is directly proportional to absorption coefficient.

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Q. The absorption coefficient of semiconductor materials is strongly dependent on __________

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Q. Direct absorption requires assistance of photon.

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Q. In optical fiber communication, the only weakly absorbing material over wavelength band required is?

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Q. The threshold for indirect absorption occurs at wavelength __________

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Q. The semiconductor material for which the lowest energy absorption takes place is?

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Q. The wavelength range of interest for Germanium is __________

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