Q. The photocurrent in a photodiode is directly proportional to absorption coefficient.

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Q. The absorption coefficient of semiconductor materials is strongly dependent on __________

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Q. Direct absorption requires assistance of photon.

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Q. In optical fiber communication, the only weakly absorbing material over wavelength band required is?

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Q. The threshold for indirect absorption occurs at wavelength __________

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Q. The semiconductor material for which the lowest energy absorption takes place is?

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Q. The wavelength range of interest for Germanium is __________

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Q. A photodiode should be chosen with a ________________ less than photon energy.

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Q. ________________ photodiodes have large dark currents.

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Q. For fabrication of semiconductor photodiodes, there is a drawback while considering _________________

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Q. _________________ materials are potentially superior to germanium.

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Q. ____________ alloys such as InGaAsP and GaAsSb deposited on InP and GaSb substrate.

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Q. _________________ alloys can be fabricated in hetero-junction structures.

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Q. The alloys lattice matched to InP responds to wavelengths up to 1.7 μm is?

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Q. The fraction of incident photons generated by photodiode of electrons generated collected at detector is known as ___________________

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Q. In photo detectors, energy of incident photons must be ________________ band gap energy.

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Q. GaAs has band gap energy of 1.93 eV at 300 K. Determine wavelength above which material will cease to operate.

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Q. The long cutoff wavelength of GaAs is 0.923 μm. Determine bandgap energy.

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Q. Quantum efficiency is a function of photon wavelength.

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Q. Determine quantum efficiency if incident photons on photodiodes is 4*10¹¹ and electrons collected at terminals is 1.5*10¹¹?

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