Q. The alloys lattice matched to InP responds to wavelengths up to 1.7 μm is?

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Q. The fraction of incident photons generated by photodiode of electrons generated collected at detector is known as ___________________

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Q. In photo detectors, energy of incident photons must be ________________ band gap energy.

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Q. GaAs has band gap energy of 1.93 eV at 300 K. Determine wavelength above which material will cease to operate.

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Q. The long cutoff wavelength of GaAs is 0.923 μm. Determine bandgap energy.

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Q. Quantum efficiency is a function of photon wavelength.

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Q. Determine quantum efficiency if incident photons on photodiodes is 4*10¹¹ and electrons collected at terminals is 1.5*10¹¹?

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Q. A photodiode has quantum efficiency of 45% and incident photons are 3*10¹¹. Determine electrons collected at terminals of device.

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Q. The quantum efficiency of photodiode is 40% with wavelength of 0.90*10⁻⁶. Determine the responsivity of photodiodes.

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Q. The Responsivity of photodiode is 0.294 AW⁻¹ at wavelength of 0.90 μm. Determine quantum efficiency.

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Q. Determine wavelength of photodiode having quantum efficiency of 40% and Responsivity of 0.304 AW⁻¹.

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Q. Determine wavelength at which photodiode is operating if energy of photons is 1.9*10⁻¹⁹J?

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Q. Determine the energy of photons incident on a photodiode if it operates at a wavelength of 1.36 μm.

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Q. Determine Responsivity of photodiode having o/p power of 3.55 μm and photo current of 2.9 μm.

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Q. Determine incident optical power on a photodiode if it has photocurrent of 2.1 μA and responsivity of 0.55 A/W.

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Q. If a photodiode requires incident optical power of 0.70 A/W. Determine photocurrent.

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Q. The width of depletion region is dependent on ___________ of semiconductor.

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Q. Electron-hole pairs are generated in ___________

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Q. The diffusion process is _____________ as compared with drift.

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Q. Determine drift time for carrier across depletion region for photodiode having intrinsic region width of 30 μm and electron drift velocity of 10⁵ ms⁻¹.

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