Q. The trans-impedance front end configuration operates as a __________ with negative feedback.

View solution

Q. ____________ is the lowest noise amplifier device.

View solution

Q. FET device has extremely high input impedance greater than _________

View solution

Q. The properties of a bipolar transistor are superior to the FET.

View solution

Q. Bipolar transistor is more useful amplifying device than FET at frequencies _____________

View solution

Q. High-performance microwave FETs are fabricated from ___________

View solution

Q. Gallium arsenide MESFETs are advantageous than Silicon FETs.

View solution

Q. The PIN-FET hybrid receivers are a combination of ______________

View solution

Q. PIN-FET hybrid receiver is designed for use at a transmission rate of _____________

View solution

Q. It is difficult to achieve higher transmission rates using conventional __________

View solution

Q. Which receiver can be fabricated using PIN-FET hybrid approach?

View solution

Q. A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________

View solution

Q. What is usually required by FETs to optimize the figure of merit?

View solution

Q. How many design considerations are considered while determining the receiver performance?

View solution

Q. FET preamplifiers provide higher sensitivity than the Si-bipolar device.

View solution

Q. What is the abbreviation of HBT?

View solution

Q. What type of receivers are used to provide wideband operation, low-noise operation?

View solution

Q. ___________ circuits extends the dynamic range of the receiver.

View solution

Q. The sensitivity of the low-impedance configuration is ____________

View solution

Q. What is generally used to determine the receiver performance characteristics?

View solution