Q. ____________ is the lowest noise amplifier device.

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Q. FET device has extremely high input impedance greater than _________

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Q. The properties of a bipolar transistor are superior to the FET.

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Q. Bipolar transistor is more useful amplifying device than FET at frequencies _____________

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Q. High-performance microwave FETs are fabricated from ___________

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Q. Gallium arsenide MESFETs are advantageous than Silicon FETs.

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Q. The PIN-FET hybrid receivers are a combination of ______________

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Q. PIN-FET hybrid receiver is designed for use at a transmission rate of _____________

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Q. It is difficult to achieve higher transmission rates using conventional __________

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Q. Which receiver can be fabricated using PIN-FET hybrid approach?

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Q. A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________

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Q. What is usually required by FETs to optimize the figure of merit?

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Q. How many design considerations are considered while determining the receiver performance?

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Q. FET preamplifiers provide higher sensitivity than the Si-bipolar device.

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Q. What is the abbreviation of HBT?

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Q. What type of receivers are used to provide wideband operation, low-noise operation?

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Q. ___________ circuits extends the dynamic range of the receiver.

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Q. The sensitivity of the low-impedance configuration is ____________

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Q. What is generally used to determine the receiver performance characteristics?

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Q. The __________ technique eliminates the thermal noise associated with the feedback resistor in the trans-impedance front end design.

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