Q. An atom of polarizability a is placed in a homogeneous electric field E. The energy stored in polarized atom is

View solution

Q. If B, H and M denote flux density, field intensity and magnetisation, B = μ₀ (H + M).

View solution

Q. A capacitor can be represented by a capacitance and resistance in parallel. For a good capacitor, this parallel resistance should be

View solution

Q. Assertion (A): Ionic solids, in general, have no electrical conductivity.

Reason (R): In ionic solids, electrons are tightly bound to the nucleus.

View solution

Q. Tesla is a unit of

View solution

Q. If the operating temperature increases by 10°C, the rate of deterioration of solid dielectric becomes

View solution

Q. In which of the following semiconductor are holes minority carriers

View solution

Q. At 0 K, silicon and germanium behave like monoatomic crystals.

View solution

Q. Assertion (A): Acceptor extrinsic semiconductor has higher conductivity than intrinsic semiconductor.

Reason (R): Addition of p-type impurity produces an allowable discrete energy level just above valence band.

View solution

Q. When temperature is above ferromagnetic Curie temperature, a ferromagnetic material

View solution

Q. A magnet does not attract

View solution

Q. Bitter powder patterns prove the existence of domains.

View solution

Q. Assertion (A): An amorphous material is obtained when mobility of atoms is inhibited during solidification.

Reason (R): Crystalline state is a natural state for most solids.

View solution

Q. An air cored inductance is a

View solution

Q. The number of valence electrons in silicon atom is

View solution

Q. ∈ᵣ is determined by the atomic structure of the dielectric.

View solution

Q. A rare gas has N atoms per m³. If electronic polarizability of single atom of this gas is αe, then

View solution

Q. The colour code on a carbon resistor is brown-black-red-gold. The value of resistance is

View solution

Q. M = (μᵣ - 1)H.

View solution

Q. Silicon and germanium are elements in the

View solution