Q. Which of the following can be used to isolate a low impedance from a high impedance source?

View solution

Q. A class C amplifier uses

View solution

Q. A three-section RC phase shift oscillator has R = 10K ohms and C = 0.001 μF. If the oscillator is to be made variable using the same value of R, what should be the value of capacitor to obtain a frequency if 1 kHz?

View solution

Q. The input to negative clamper has a peak value of Vp. Then in the output the positive and negative peaks are nearly

View solution

Q. In a common Emitter BJT amplifier, the maximum usable supply voltage is limited by

View solution

Q. High frequency oscillations can be caused by

View solution

Q. A feedback network to be used with an amplifier to provide oscillation is tested and found to give an output of 0.124 V with a 0.5 V input. What will be the effect on output if the amplifier's gain is twice that required by the Barkhausen criterion?

View solution

Q. A transistor in CE mode is in saturation region. Then the collector is almost at

View solution

Q. The semi-conductor type 2 N 34 indicates

View solution

Q. The emitter bias largely depends on

View solution

Q. A limiter circuit can be built using a diode and resistance.

View solution

Q. In saturation region JFET acts like a

View solution

Q. FET can used in

View solution

Q. Each of two cascaded stages has a voltage gain of 30. The overall gain is

View solution

Q. A two stage amplifier has an upper cutoff frequency of 2 MHz and a lower cutoff frequency of 2 MHz and a lower cut off frequency of 30 Hz. If both stages are similar, their individual upper and lower cut off frequencies respectively are

View solution

Q. A bipolar transistor is a __________ controlled devices whereas a FET is a __________ controlled devices.

View solution

Q. The input impedance of a non-inverting amplifier is very low.

View solution

Q. RC oscillator can be used upto

View solution

Q. In a N-P-N transistor of the emitter junction is reverse biased and collector junction is also reversed biased, the transistor will operate in

View solution

Q. Wide banding technique is employed in the

View solution