Q. Thermal runaway is not possible in FET, because as the temperature of FET increases.

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Q. Which of the following pairs of semiconductors and current carriers is correctly matched?

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Q. The effect of a finite gain of operational amplifier used in an integrator is that

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Q. The ripple factor from a capacitor filter __________ as the load resistance __________ .

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Q. Of the various capacitances associated with a junction transistor the gain bandwidth product is affected to maximum extend by

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Q. Choose proper substitutes for x and y to make the following statement correct.
Tunnel diode, Avalanche photodiode are operated in x bias and y bias respectively.

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Q. Assertion (A): When a zener diode breakdown, occurs the voltage across it is constant.

Reason (R): The upper limit of zener current is determined by power handling capacity.

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Q. Consider the following statements

1. An iron cored choke is a nonlinear device.
2. A carbon resistor kept in a sunlight is a time - invariant and passive device.
3. A dry cell is a time - varying and active device.
4. An air capacitor is a time - invariant and passive device

Of these statements

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Q. If 10 V is the peak voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit), then the maximum voltage on the reverse biased diode will be

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Q. In energy band diagram of p type semiconductor the acceptor energy level is

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Q. Given a power supply filter circuit, what measurements must be made of determine percentage regulation

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Q. When the gate terminal of MOSFET is positive, it is said to operate in

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Q. Assertion (A): In a Schottky diode the reverse recovery time is almost zero.

Reason (R): A Schottky diode has aluminium silicon junction.

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Q. The drain characteristics of JFET are drawn between

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Q. Electrical contact materials used in switches, brushes and relays must possess

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Q. A JFET behaves as a constant current source when

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Q. The electron and hole concentration in a intrinsic semiconductor are ni and Pi respectively when doped with a P type material, these change to n and P, respectively. Then

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Q. The energy to cause thermionic emission is supplied by heating the cathode.

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Q. Assertion (A): In an n-p-n transistor as the electrons enter the collector region, they are accelerated towards the collector terminal.

Reason (R): Emitter base junction in BJT is forward biased.

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Q. Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value.

Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.

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