Q. Power diodes are generally

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Q. The inductance of a single layer solenoid of 10 turns is 5 μH. Which one of the following is the correct value of inductance when the number of turns is 20 and the length is doubled.

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Q. The depletion layer width of Junction

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Q. Forbidden energy gap in germanium at 0 K is about

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Q. Light dependent resistors are

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Q. For a NPN bipolar transistor, what is the main stream of current in the base region?

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Q. Assertion (A): A VMOS can handle much larger current than other field effect transistors.

Reason (R): In a VMOS the conducting channel is very narrow.

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Q. In monolithic ICs, all the components are fabricated by

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Q. Which one of the following is not a characteristic of a ferroelectric material?

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Q. In case of photo conductor for germanium when forbidden energy gap is 0.72 eV, the critical wavelength for intrinsic excitation will be

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Q. Intrinsic concentration of charge carriers in a semiconductor varies as

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Q. The dynamic resistance of a forward biased p-n diode

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Q. A thermistor is a

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Q. In a bipolar transistor, the base collector junction has

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Q. An intrinsic silicon sample has 1 million free electrons at room temperature. As the temperature is increased

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Q. What is the necessary a.c. input power from the transformer secondary used in a half wave rectifier to deliver 500 W of d.c. power to the load?

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Q. In a semi-conductor diode, the barrier offers opposition to

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Q. In a half wave rectifier, the load current flows

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Q. The term efficacy, is defined by

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Q. The addition of p type impurity to intrinsic material creates allowable energy levels.

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