Question

In a reactance FET, gm = 9 x 10‾³ Siemens, gate to source resistance is one-ninth of reactance of gate to drain capacitor and frequency is 4 MHz. The capacitive-reactance is

a.

1000 Ω

b.

1/1000 Ω

c.

36 x 10³ Ω

d.

4/9 x 10³ Ω

Answer: (a).1000 Ω

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Q. In a reactance FET, gm = 9 x 10‾³ Siemens, gate to source resistance is one-ninth of reactance of gate to drain capacitor and frequency is 4 MHz. The capacitive-reactance is

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