Analog Electronics MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Analog Electronics, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Analog Electronics MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Analog Electronics mcq questions that explore various aspects of Analog Electronics problems. Each MCQ is crafted to challenge your understanding of Analog Electronics principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Analog Electronics MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Analog Electronics. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Analog Electronics knowledge to the test? Let's get started with our carefully curated MCQs!

Analog Electronics MCQs | Page 48 of 103

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Q471.
The A.C. resistance of the emitter diode will be

a.

5.05 ฮฉ

b.

50.5 ฮฉ

c.

505 ฮฉ

d.

5050 ฮฉ

Discuss
Answer: (b).50.5 ฮฉ
Q472.
For a transistor amplifier with self biasing network, the following components are used. R1 = 4 kฮฉ, R2 = 4 kฮฉ, RC = 1 kฮฉ. The approximate value of the stability factor 'S' will be

a.

4

b.

3

c.

2

d.

1.5

Discuss
Answer: (b).3
Q473.
The gate electrode in the FET corresponds to the

a.

collector in a bipolar transistor

b.

base in a bipolar transistor

c.

emitter in a bipolar transistor

d.

none of the above

Discuss
Answer: (b).base in a bipolar transistor
Q474.
The properties of JFET resemble those of

a.

thermionic values

b.

N-P-N transistors

c.

P-N-P transistors

d.

unijunction transistor

Discuss
Answer: (b).N-P-N transistors
Q475.
Assertion (A): Transformer coupling has the disadvantage of the weight of transformer and Saturation of core

Reason (R): Transformer coupling is very suitable for impedance matching

a.

Both A and R are correct and R is correct explanation for A

b.

Both A and R are correct but R is not correct explanation for A

c.

A is correct R is wrong

d.

A is wrong R is correct

Discuss
Answer: (b).Both A and R are correct but R is not correct explanation for A
Q476.
A Hartley oscillator is used for generation

a.

very low frequency oscillation

b.

radio frequency oscillation

c.

microwave oscillation

d.

audio-frequency oscillation

Discuss
Answer: (d).audio-frequency oscillation
Q477.
Astable multivibrator has

a.

one stable state

b.

two stable state

c.

two quasi-stable states

d.

one quasi stable state

Discuss
Answer: (c).two quasi-stable states
Q478.
Most small signal transistors are

a.

N-P-N, silicon, in a plastic package

b.

P-N-P, silicon, in a plastic package

c.

N-P-N, germanium in a metallic case

d.

P-N-P, germanium in a metallic case

Discuss
Answer: (a).N-P-N, silicon, in a plastic package
Q479.
A FET is a better clapper than a BJT because it has

a.

lower off-set voltage

b.

higher series ON resistance

c.

lower input current

d.

higher input impedance

Discuss
Answer: (a).lower off-set voltage
Q480.
The input gate current of FET is closer to

a.

few amperes

b.

few milli amperes

c.

few microamperes

d.

negligibly smaller value

Discuss
Answer: (d).negligibly smaller value
Page 48 of 103