Q. The input gate current of FET is closer to

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Q. When a 1 V increase in gate voltage changes the drain current 10 mA in an FET, its gm equals

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Q. In a P-N-P junction transistor as compared to base region is more heavily doped so that

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Q. In every practical oscillator the loop gain is slightly more than unit and amplitude of oscillations is limited by

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Q. Which of the following is not valid in case of FETs?

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Q. When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The common base short circuit current gain a for the transistor is

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Q. In a transistor which of the following region is very lightly doped and is very thin?

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Q. The properties of FETs closely resemble those of a

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Q. The purpose of providing groundings rings with MOSFET is to

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Q. The minimum value of hfe of a transistor used in RC phase shift oscillator is

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Q. Self bias is an example of __________ feedback that tends to stabilize the drain current against changes in temperature and JFET replacement.

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Q. In a transistor amplifier, the reverse saturation current Iᴄᴑ

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Q. When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The common-emitter short-circuit current gain is

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Q. Assertion (A): A common collector amplifier is used for matching a high impedance source to a low impedance load

Reason (R): A common collector amplifier has a near unity voltage gain

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Q. In a crystal oscillator of the Colpitt's oscillator type, the crystal is put is place of the

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Q. Class A and Class B power amplifiers predominate at

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Q. In a class C operation VCC = 30 V and VCE(sat) = 2 V. The efficiency is

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Q. In a CE amplifier, the collector resistance is 6 kΩ and load resistance is 3 kΩ. The ac load resistance is

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Q. A voltage tripler circuit uses

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Q. An op-amp uses

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