Optical Detectors MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Optical Detectors, a fundamental topic in the field of Optical Communication. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Optical Detectors MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Optical Detectors mcq questions that explore various aspects of Optical Detectors problems. Each MCQ is crafted to challenge your understanding of Optical Detectors principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Optical Communication tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Optical Detectors MCQs are your pathway to success in mastering this essential Optical Communication topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Optical Detectors. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Optical Detectors knowledge to the test? Let's get started with our carefully curated MCQs!

Optical Detectors MCQs | Page 6 of 11

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Q51.
The diffusion process is _____________ as compared with drift.

a.

Very fast

b.

Very slow

c.

Negligible

d.

Better

Discuss
Answer: (b).Very slow
Q52.
Determine drift time for carrier across depletion region for photodiode having intrinsic region width of 30 μm and electron drift velocity of 10⁵ ms⁻¹.

a.

1×10⁻¹⁰ Seconds

b.

2×10⁻¹⁰ Seconds

c.

3×10⁻¹⁰ Seconds

d.

4×10⁻¹⁰ Seconds

Discuss
Answer: (c).3×10⁻¹⁰ Seconds
Q53.
Determine intrinsic region width for a photodiode having drift time of 4×10⁻¹⁰ s and electron velocity of 2×10⁻¹⁰ ms⁻¹.

a.

3×10⁻⁵ M

b.

8×10⁻⁵ M

c.

5×10⁻⁵ M

d.

7×10⁻⁵ M

Discuss
Answer: (b).8×10⁻⁵ M
Q54.
Determine velocity of electron if drift time is 2×10⁻¹⁰ s and intrinsic region width of 25×10⁻⁶ μm.

a.

12.5×10⁴

b.

11.5×10⁴

c.

14.5×10⁴

d.

13.5×10⁴

Discuss
Answer: (a).12.5×10⁴
Q55.
Compute junction capacitance for a p-i-n photodiode if it has area of 0.69×10⁻⁶ m², permittivity of 10.5×10⁻¹³ Fcm⁻¹ and width of 30 μm.

a.

3.043×10⁻⁵

b.

2.415×10⁻⁷

c.

4.641×10⁻⁴

d.

3.708×10⁻⁵

Discuss
Answer: (b).2.415×10⁻⁷
Q56.
Determine the area where permittivity of material is 15.5×10⁻¹⁵ Fcm⁻¹ and width of 25×10⁻⁶ and junction capacitance is 5 pF.

a.

8.0645×10⁻⁵

b.

5.456×10⁻⁶

c.

3.0405×10⁻²

d.

8.0645×10⁻³

Discuss
Answer: (d).8.0645×10⁻³
Q57.
Compute intrinsic region width of p-i-n photodiode having junction capacitance of 4 pF and material permittivity of 16.5×10⁻¹³ Fcm⁻¹ and area of 0.55×10⁻⁶ m².

a.

7.45×10⁻⁶

b.

2.26×10⁻⁷

c.

4.64×10⁻⁷

d.

5.65×10⁻⁶

Discuss
Answer: (b).2.26×10⁻⁷
Q58.
Determine permittivity of p-i-n photodiode with junction capacitance of 5 pF, area of 0.62×10⁻⁶ m² and intrinsic region width of 28 μm.

a.

7.55×10⁻¹²

b.

2.25×10⁻¹⁰

c.

5×10⁻⁹

d.

8.5×10⁻¹²

Discuss
Answer: (b).2.25×10⁻¹⁰
Q59.
Determine response time of p-i-n photodiode if it has 3 dB bandwidth of 1.98×10⁸ Hz.

a.

5.05×10⁻⁶ sec

b.

5.05×10⁻⁷ sec

c.

5.05×10⁻⁹ sec

d.

5.05×10⁻⁸ sec

Discuss
Answer: (c).5.05×10⁻⁹ sec
Q60.
Compute maximum 3 dB bandwidth of p-i-n photodiode if it has a max response time of 5.8 ns.

a.

0.12 GHz

b.

0.14 GHz

c.

0.17 GHz

d.

0.13 GHz

Discuss
Answer: (c).0.17 GHz
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