Optical Detectors MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Optical Detectors, a fundamental topic in the field of Optical Communication. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Optical Detectors MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Optical Detectors mcq questions that explore various aspects of Optical Detectors problems. Each MCQ is crafted to challenge your understanding of Optical Detectors principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Optical Communication tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Optical Detectors MCQs are your pathway to success in mastering this essential Optical Communication topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Optical Detectors. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Optical Detectors knowledge to the test? Let's get started with our carefully curated MCQs!

Optical Detectors MCQs | Page 4 of 11

Q31.
____________ alloys such as InGaAsP and GaAsSb deposited on InP and GaSb substrate.
Discuss
Answer: (a).Ternary
Q32.
_________________ alloys can be fabricated in hetero-junction structures.
Discuss
Answer: (b).III – V alloys
Q33.
The alloys lattice matched to InP responds to wavelengths up to 1.7 μm is?
Discuss
Answer: (d).InGaAs
Q34.
The fraction of incident photons generated by photodiode of electrons generated collected at detector is known as ___________________
Discuss
Answer: (a).Quantum efficiency
Q35.
In photo detectors, energy of incident photons must be ________________ band gap energy.
Discuss
Answer: (b).Greater than
Q36.
GaAs has band gap energy of 1.93 eV at 300 K. Determine wavelength above which material will cease to operate.
Discuss
Answer: (b).6.424*10⁻⁷
Q37.
The long cutoff wavelength of GaAs is 0.923 μm. Determine bandgap energy.
Discuss
Answer: (d).2.152*10⁻¹⁹
Q38.
Quantum efficiency is a function of photon wavelength.
Discuss
Answer: (a).True
Q39.
Determine quantum efficiency if incident photons on photodiodes is 4*10¹¹ and electrons collected at terminals is 1.5*10¹¹?
Discuss
Answer: (b).37.5%
Q40.
A photodiode has quantum efficiency of 45% and incident photons are 3*10¹¹. Determine electrons collected at terminals of device.
Discuss
Answer: (b).1.35*10¹¹
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