Optical Detectors MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Optical Detectors, a fundamental topic in the field of Optical Communication. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Optical Detectors MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Optical Detectors mcq questions that explore various aspects of Optical Detectors problems. Each MCQ is crafted to challenge your understanding of Optical Detectors principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Optical Communication tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Optical Detectors MCQs are your pathway to success in mastering this essential Optical Communication topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Optical Detectors. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Optical Detectors knowledge to the test? Let's get started with our carefully curated MCQs!

Optical Detectors MCQs | Page 7 of 11

Q61.
Determine maximum response time for a p-i-n photodiode having width of 28×10⁻⁶ m and carrier velocity of 4×10⁴ ms⁻¹.
Discuss
Answer: (c).227.47 MHz
Q62.
Determine carrier velocity of a p-i-n photodiode where 3dB bandwidth is1.9×10⁸ Hz and depletion region width of 24 μm.
Discuss
Answer: (b).29.55×10⁻³
Q63.
Compute depletion region width of a p-i-n photodiode with 3 dB bandwidth of 1.91×10⁸ Hz and carrier velocity of 2×10⁴ ms⁻¹.
Discuss
Answer: (a).1.66×10⁻⁵
Q64.
___________ has more sophisticated structure than p-i-n photodiode.
Discuss
Answer: (a).Avalanche photodiode
Q65.
The phenomenon leading to avalanche breakdown in reverse-biased diodes is known as _______
Discuss
Answer: (c).Impact ionization
Q66.
_______ is fully depleted by employing electric fields.
Discuss
Answer: (a).Avalanche photodiode
Q67.
At low gain, the transit time and RC effects ________
Discuss
Answer: (c).Dominate
Q68.
At high gain, avalanche buildup time ________
Discuss
Answer: (d).Dominates
Q69.
Often __________ pulse shape is obtained from APD.
Discuss
Answer: (c).Asymmetric
Q70.
Fall times of 1 ns or more are common.
Discuss
Answer: (a).True