Q. Figure shows a self bias circuit for FET amplifier, ID = 4 mA. Then IS =

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Q. In the CE equivalent circuit of figure, the voltage gain is

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Q. In the circuit shown in figure, RC = 10k, RE = 150Ω, β = 100, I = 1 mA. The value of A = Vo/Vs, will be

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Q. Which of the following is correct?

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Q. In figure, ID = 4 mA. Then VD =

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Q. A circuit using an op-amp is shown in the given figure. It has

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Q. In figure VBE = 0.7 V. The base current is

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Q. The circuit in the given figure is

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Q. A bridge diode circuit using ideal diodes has in input voltage of 20 sin ωt volts. The average and rms values of output voltage are

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Q. In the circuit of figure v1 = 8 V and v2 = 0. Which diode will conduct (Assume ideal diodes)?

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Q. In the circuit of figure β = 100 and quiescent value of base current is 20 μA. The quiescent value of collector

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Q. In figure which diode will conduct and what will be the value of V0?

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Q. For the amplifier circuit of figure, the h parameters of transistor are hib = 25 Ω, hfb = 0.999, hob = 10¯⁶ Ω. The voltage gain is

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Q. In figure, VCC = + 30 V, R1 = 200 kΩ and R2 = 100 kΩ. If VBE = 0.7 V, the voltage a cross RE =

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Q. The Vo of the op-amp circuit shown in the given is

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Q. In figure base current is 10 μA and βdc = 100. Then VE =

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Q. In the figure, assume the op-amp is to be ideal. The output Vo if the circuit is

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Q. Assuming VCE sat = 0.2 V and β = 50, the minimum base current (IB) required to drive the transistor in the given figure to saturation is

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Q. In the op-amp circuit given in the figure, the load current iL is

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Q. In figure, secondary winding has 40 turns. For maximum power transformer to 2 ohm resistance the number of turns in primary is

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