Q. The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification.

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Q. From the given circuit below, we can conclude that.

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Q. Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10¯⁸ amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V.

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Q. As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by the equation

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Q. Discrete transistors T1 and T2 having maximum collector current rating of 0.75 amp are connected in parallel as shown in the figure, this combination is treated as a single transistor to carry a total current of 1 ampere, when biased with self bias circuit. When the circuit is switched on, T1 draws 0.55 amps and T2 draws 0.45 amps. If the supply is kept on continuously, ultimately it is very likely that

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Q. In given figure a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes approximately equal to

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Q. The current through a PN Junction diode with v volts applied to the P region to the N region, where (I₀ is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is

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Q. In a P-type semiconductor, the conductivity due to holes (= σP) is equal to e = charge of hole, μP = hole mobility, P = hole concentration,

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Q. The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off current (ICB0) as

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Q. Figure represents a

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Q. In the figure shows the circuits symbol of

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Q. The 6 V zener diode shown in figure has zero zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does not fall below 6 V is

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Q. For bipolar transistor

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Q. Figure shows characteristics curves for bipolar transistor. These curves are

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Q. In photo electric emission, the threshold frequency f0, work function Uw, and Planck's constant h are related as

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Q. Figure represents a

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Q. The v-i characteristic of an element is shown in below figure the element is

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Q. Diffusion constants Dp, Dn mobility μp, μn and absolute temperature T are related as

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Q. The fT of a BJT is related to its gm, Cπ and Cμ as follows.

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Q. Figure represents a

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