Q. The current through a PN Junction diode with v volts applied to the P region to the N region, where (I₀ is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is

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Q. In a P-type semiconductor, the conductivity due to holes (= σP) is equal to e = charge of hole, μP = hole mobility, P = hole concentration,

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Q. The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off current (ICB0) as

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Q. Figure represents a

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Q. In the figure shows the circuits symbol of

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Q. The 6 V zener diode shown in figure has zero zener resistance and a knee current of 5 mA. The minimum value of R, so that the voltage across it does not fall below 6 V is

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Q. For bipolar transistor

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Q. Figure shows characteristics curves for bipolar transistor. These curves are

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Q. In photo electric emission, the threshold frequency f0, work function Uw, and Planck's constant h are related as

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Q. Figure represents a

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Q. The v-i characteristic of an element is shown in below figure the element is

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Q. Diffusion constants Dp, Dn mobility μp, μn and absolute temperature T are related as

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Q. The fT of a BJT is related to its gm, Cπ and Cμ as follows.

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Q. Figure represents a

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Q. The O/P char, of a FET is given in the figure. In which region is the device biased for small signal amplification?

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Q. The current in a p-n junction diode with V volts applied in p region relative to n region (where I0 is reverse saturation current, m is ideality factor, k is Boltzmann's constant, T is absolute temp and q is charge on electron) is

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Q. In the BJT amplifier shown in the figure is the transistor is biased in the forward active region. Putting a capacitor across RE will

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Q. Figure shows small signal common base transistor circuit.The current source I and resistor R on the output side are

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Q. The circuit shown in the figure is best described as a

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Q. The current density J, free electron mobility μn, hole mobility μp , magnitude of free electron and hole concentration ni electric field E and charge on electron e, in intrinsic semiconductor are related as

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