Q. The v-i characteristic of an element is shown in below figure the element is

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Q. Diffusion constants Dp, Dn mobility μp, μn and absolute temperature T are related as

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Q. The fT of a BJT is related to its gm, Cπ and Cμ as follows.

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Q. Figure represents a

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Q. The O/P char, of a FET is given in the figure. In which region is the device biased for small signal amplification?

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Q. The current in a p-n junction diode with V volts applied in p region relative to n region (where I0 is reverse saturation current, m is ideality factor, k is Boltzmann's constant, T is absolute temp and q is charge on electron) is

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Q. In the BJT amplifier shown in the figure is the transistor is biased in the forward active region. Putting a capacitor across RE will

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Q. Figure shows small signal common base transistor circuit.The current source I and resistor R on the output side are

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Q. The circuit shown in the figure is best described as a

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Q. The current density J, free electron mobility μn, hole mobility μp , magnitude of free electron and hole concentration ni electric field E and charge on electron e, in intrinsic semiconductor are related as

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Q. In bipolar transistors dc current gain is

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Q. Which is correct for a vacuum triode?

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Q. Figure represents a

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Q. To avoid thermal runaway in the design of an analog circuit, the operating point of the BJT should be such that it satisfies the condition.

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Q. Hall coefficient KH and charge density ρ are related as

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Q. In p type semiconductors the conduction due to holes ( = σp ) is (where e = charge on hole, μp is hole mobility and ρ is hole concentration)

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Q. The Ebers-moll equation for IE in CB configuration is given by

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Q. The small signal input impedance of a transistor whose output is shorted for the measuring signal is

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Q. The dipole moment per unit volume as a function of E in the case of an insulator is given by (symbols have the usual meaning).

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Q. The diode and the moving coil milliammeter of figure are assumed to be ideal. The meter reading is

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