Q. For a transistor amplifier with self biasing network, the following components are used. R1 = 4 kΩ, R2 = 4 kΩ, RC = 1 kΩ. The approximate value of the stability factor 'S' will be

View solution

Q. The gate electrode in the FET corresponds to the

View solution

Q. The properties of JFET resemble those of

View solution

Q. Assertion (A): Transformer coupling has the disadvantage of the weight of transformer and Saturation of core

Reason (R): Transformer coupling is very suitable for impedance matching

View solution

Q. A Hartley oscillator is used for generation

View solution

Q. Astable multivibrator has

View solution

Q. Most small signal transistors are

View solution

Q. A FET is a better clapper than a BJT because it has

View solution

Q. The input gate current of FET is closer to

View solution

Q. When a 1 V increase in gate voltage changes the drain current 10 mA in an FET, its gm equals

View solution

Q. In a P-N-P junction transistor as compared to base region is more heavily doped so that

View solution

Q. In every practical oscillator the loop gain is slightly more than unit and amplitude of oscillations is limited by

View solution

Q. Which of the following is not valid in case of FETs?

View solution

Q. When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The common base short circuit current gain a for the transistor is

View solution

Q. In a transistor which of the following region is very lightly doped and is very thin?

View solution

Q. The properties of FETs closely resemble those of a

View solution

Q. The purpose of providing groundings rings with MOSFET is to

View solution

Q. The minimum value of hfe of a transistor used in RC phase shift oscillator is

View solution

Q. Self bias is an example of __________ feedback that tends to stabilize the drain current against changes in temperature and JFET replacement.

View solution

Q. In a transistor amplifier, the reverse saturation current Iᴄᴑ

View solution