Q. Harmonic distortion in CB amplifier may be least when the load resistance is

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Q. If a common emitter amplifier with an emitter resistance RC has an overall transconductance gain of 1 m A/V, a voltage gain of - 4 and desensitivity of 50, then the value of the emitter resistance R would be

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Q. Turn on time of a transistor switch is equal to sum of (where tr is rise time, td is delay time)

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Q. In amplifiers, the parasitic oscillation result due to

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Q. A ripple in collector supply voltage of the output stage of amplifier causes noise.

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Q. In a transistor IE = 10 mA, ICO = 0.5 μA and α = 0.995. Then ICEO =

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Q. As a compared to a CB amplifier, a CE amplifier has

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Q. The stray capacitance between the last stage and the first stage of an oscillator may cause

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Q. In a voltage regulator circuit using zener diode the load voltage is nearly constant only if

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Q. Negative feedback in amplifier

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Q. Which of the following is the fastest switching device?

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Q. Which of the following is not valid in case of bipolars?

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Q. The input resistance of JFET ideally approaches

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Q. In the analysis of common emitter amplifier we may neglect

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Q. A three-section RC phase shift oscillator has R = 10K ohms and C = 0.001 μF. The frequency of oscillations is

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Q. Assertion (A): Electric coupling, magnetic coupling and ground loop can cause unwanted high frequency oscillations.

Reason (R): Hartley oscillator uses a tapped inductor

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Q. In CB amplifier the distortion of the input voltage waveform may occur due to

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Q. As compared to full wave rectifier, a half wave rectifier

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Q. Assertion (A): A self bias circuit is the most commonly used bias circuit for bipolar junction transistors

Reason (R): A self bias circuit limits the increase in collector or emitter current due to change in junction temperature.

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Q. In an amplifier if conductor during the cycle is from 0 to 90° and again from 180° to 270°, the amplifier will be termed as

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