Q. Assertion (A): Two transistors one n-p-n and the other p-n-p are identical in all respects (doping, construction, shape, size). The n-p-n transistor will have better frequency response.

Reason (R): The electron mobility is higher than hole mobility.

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Q. In which of the following is the width of junction barrier very small?

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Q. If the reverse voltage across a p-n junction is increased three times, the junction capacitance

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Q. Which of these has highly doped p and n region?

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Q. Measurement of Hall coefficient enables the determination of

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Q. The units for transconductance are

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Q. The mean free path of conduction electrons in copper is about 4 x 10¯⁸ m. For a copper block, find the electric field which can give, on an average, 1 eV energy to a conduction electron

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Q. When a p-n-p transistor is properly biased to operate in active region the holes from emitter.

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Q. Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices.

Reason (R): Forbidden gap in silicon is more than that in germanium.

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Q. Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode.

Reason (R): When a diode is reverse biased surface leakage current flows.

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Q. At room temperature a semiconductor material is

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Q. The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of

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Q. Which of these has degenerate p and n materials?

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Q. A Schottky diode clamp is used along with switching BJT for

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Q. In a piezoelectric crystal, applications of a mechanical stress would produce

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Q. What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor? Emitter diffusionBase diffusionBuried layer formationE pi-layer formation Select the correct answer using the codes given below:

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Q. Calculate the resistivity of n-type semiconductor from the following data, Density of holes = 5 x 1012 cm-3. Density of electrons = 8 x 1013 cm-3, mobility of conduction electron = 2.3 x 104 cm²/ V-sec and mobility of holes = 100 cm²/V-sec.

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Q. A semiconductor diode is biased in forward direction and carrying current I. The current due to holes in p material is

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Q. Between which regions does BJT act like switch?

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Q. Assertion (A): When a photoconductive device is exposed to light, its bulk resistance increases.

Reason (R): When exposed to light, electron hole pairs are generated in the photoconductive device.

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