Q. The SCR would be turned OFF by voltage reversal of applied anode-cathode ac supply of frequency of

View solution

Q. The number of valence electrons in a donor atom is

View solution

Q. An electron rises through a voltage of 100 V. The energy acquired by it will be

View solution

Q. Measurement of hall coefficient enables the determination of

View solution

Q. Which of these has 3 layers?

View solution

Q. For an P-channel enhancement type MOSFET determine the drain current if K = 0.278 x 10¯³A/V², VGS = -4V, VT = -2V, Voltage equivalent at 27°C = 26 mV.

View solution

Q. The skin depth of copper is found to be 66 mm at 1 MHz at a certain temperature. At the same temperature and at 2 MHz, the skin depth would be approximately

View solution

Q. When p-n junction is reverse biased the holes in p material move towards the junction and electrons in n material move away from the junction.

View solution

Q. In which material do conduction and valence bands overlap

View solution

Q. For a photoconductor with equal electron and hole mobilities and perfect ohmic contacts at the ends, an increase in illumination results in

View solution

Q. The number of p-n junctions in a semiconductor diode are

View solution

Q. Assertion (A): A high junction temperature may destroy a diode.

Reason (R): As temperature increases the reverse saturation current increases.

View solution

Q. A Si sample is doped with a fixed number of group N impurities. The electron density n is measured from 4 K to 1200 k for the sample. Which one of the following is correct?

View solution

Q. Assertion (A): In design of circuit using BJT, a derating factor is used.

Reason (R): As the ambient temperature increases, heat dissipation becomes slower.

View solution

Q. If the drift velocity of holes under a field gradient of 100 V/m is 5m/sec. Their mobility is

View solution

Q. In a P type silicon sample, the hole concentration is 2.25 x 10¹⁵ / cm³. If the intrinsic carrier concentration is 1.5 x 10¹ᴼ/ cm³ the electron concentration is

View solution

Q. The behaviour of a JFET is similar to that of

View solution

Q. Dielectric strength of polythene is around

View solution

Q. Resistivity of hard drawn copper is

View solution

Q. The channel of JFET consists of

View solution