Q. Assertion (A): The frequency of light used for photoelectric emission is high.

Reason (R): As per Einstein's equation 0.5 mv² < hf - Uw.

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Q. The electric breakdown strength is affected by

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Q. When a diode is forward biased, the diode current is

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Q. At room temperature, the current in the, intrinsic semiconductor is due to

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Q. Which of these is also called 'hot carrier diode'?

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Q. A d.c. power supply has an open circuit voltage of 100 V. When the full load current is drawn, the output drops to 80 V. The percentage voltage regulation is

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Q. The ratio of impurity atoms to intrinsic semiconductor atoms in an extrinsic semiconductor is about.

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Q. To ensure that a zener diode does not get destroyed

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Q. SCR turns of from conducting state to blocking state on

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Q. The kinetic energy of free electrons in a metal is (where k is the de-Broglie wave number of the electron)

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Q. The turn on time of an SCR is 5 micro second. Its trigger pulse should have

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Q. From an n channel JFET for VDS constant and if VGS is made more negative, pinch off would occur at

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Q. Measurement of Hall coefficient enables the determination of

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Q. The process of deliberately adding impurity to a semi-conductor material is called

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Q. If E is energy level of electron and EF is Fermi level, then

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Q. The range of life time carriers (electrons and holes) is

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Q. In the forward blocking region of a silicon, controlled rectifier, the SCR is

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Q. Which of the following is a passive component?

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Q. Greatest mobility can be expected in case of

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Q. An enhancement mode MOSFET is off when the gate voltage is

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