Q. From an n channel JFET for VDS constant and if VGS is made more negative, pinch off would occur at

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Q. Measurement of Hall coefficient enables the determination of

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Q. The process of deliberately adding impurity to a semi-conductor material is called

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Q. If E is energy level of electron and EF is Fermi level, then

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Q. The range of life time carriers (electrons and holes) is

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Q. In the forward blocking region of a silicon, controlled rectifier, the SCR is

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Q. Which of the following is a passive component?

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Q. Greatest mobility can be expected in case of

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Q. An enhancement mode MOSFET is off when the gate voltage is

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Q. When atoms are held together by the sharing of valence electrons

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Q. Thermal runaway is not possible in FET, because as the temperature of FET increases.

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Q. Which of the following pairs of semiconductors and current carriers is correctly matched?

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Q. The effect of a finite gain of operational amplifier used in an integrator is that

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Q. The ripple factor from a capacitor filter __________ as the load resistance __________ .

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Q. Of the various capacitances associated with a junction transistor the gain bandwidth product is affected to maximum extend by

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Q. Choose proper substitutes for x and y to make the following statement correct.
Tunnel diode, Avalanche photodiode are operated in x bias and y bias respectively.

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Q. Assertion (A): When a zener diode breakdown, occurs the voltage across it is constant.

Reason (R): The upper limit of zener current is determined by power handling capacity.

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Q. Consider the following statements

1. An iron cored choke is a nonlinear device.
2. A carbon resistor kept in a sunlight is a time - invariant and passive device.
3. A dry cell is a time - varying and active device.
4. An air capacitor is a time - invariant and passive device

Of these statements

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Q. If 10 V is the peak voltage across the secondary of the transformer in a half wave rectifier (without any filter circuit), then the maximum voltage on the reverse biased diode will be

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Q. In energy band diagram of p type semiconductor the acceptor energy level is

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