Q. In a silicon p-i-n photodiode, if load resistance is 4 kΩ, temperature is 293 K, bandwidth is 4 MHz, find the thermal noise in the load resistor.

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Q. ________________ is a combination of shunt capacitances and resistances.

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Q. ______________ is used in the specification of optical detectors.

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Q. A photodiode has a capacitance of 6 pF. Calculate the maximum load resistance which allows an 8MHz post detection bandwidth.

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Q. The internal gain mechanism in an APD is directly related to SNR. State whether the given statement is true or false.

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Q. ____________ is dependent upon the detector material, the shape of the electric field profile within the device.

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Q. For silicon APDs, the value of excess noise factor is between _________

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Q. __________ determines a higher transmission rate related to the gain of the APD device.

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Q. _________________ APDs are recognized for their high gain-bandwidth products.

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Q. APDs do not operate at signal wavelengths between 1.3 and 1.6 μm.

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Q. How many circuits are present in an equivalent circuit for the digital optical fiber receiver?

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Q. __________ compensates for distortion of the signal due to the combined transmitter, medium and receiver characteristics.

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Q. ____________ is also known as frequency-shaping filter.

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Q. The phase frequency response of the system should be ____________ in order to minimize inter-symbol interference.

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Q. Noise contributions from the sources should be minimized to maximize the receiver sensitivity.

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Q. How many amplifier configurations are frequently used in optional fiber communication receivers?

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Q. How many receiver structures are used to obtain better receiver characteristics?

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Q. The high-impedance front-end amplifier provides a far greater bandwidth than the trans-impedance front-end.

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Q. A high-impedance amplifier has an effective input resistance of 4 MΩ. Find the maximum bandwidth that may be obtained without equalization if the total capacitance is 6 pF and total effective load resistance is 2 MΩ.

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Q. A high-input-impedance amplifier has following parameters (Total effective load resistance = 2 MΩ, Temperature = 300 K). Find the mean square thermal noise current per unit bandwidth for the high-impedance configuration.

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