Q. How many circuits are present in an equivalent circuit for the digital optical fiber receiver?

View solution

Q. __________ compensates for distortion of the signal due to the combined transmitter, medium and receiver characteristics.

View solution

Q. ____________ is also known as frequency-shaping filter.

View solution

Q. The phase frequency response of the system should be ____________ in order to minimize inter-symbol interference.

View solution

Q. Noise contributions from the sources should be minimized to maximize the receiver sensitivity.

View solution

Q. How many amplifier configurations are frequently used in optional fiber communication receivers?

View solution

Q. How many receiver structures are used to obtain better receiver characteristics?

View solution

Q. The high-impedance front-end amplifier provides a far greater bandwidth than the trans-impedance front-end.

View solution

Q. A high-impedance amplifier has an effective input resistance of 4 MΩ. Find the maximum bandwidth that may be obtained without equalization if the total capacitance is 6 pF and total effective load resistance is 2 MΩ.

View solution

Q. A high-input-impedance amplifier has following parameters (Total effective load resistance = 2 MΩ, Temperature = 300 K). Find the mean square thermal noise current per unit bandwidth for the high-impedance configuration.

View solution

Q. The mean square thermal noise current in the trans-impedance configuration is _________ greater than that obtained with the high-input-impedance configuration.

View solution

Q. The major advantage of the trans-impedance configuration over the high-impedance front end is ______________

View solution

Q. The trans-impedance front end configuration operates as a __________ with negative feedback.

View solution

Q. ____________ is the lowest noise amplifier device.

View solution

Q. FET device has extremely high input impedance greater than _________

View solution

Q. The properties of a bipolar transistor are superior to the FET.

View solution

Q. Bipolar transistor is more useful amplifying device than FET at frequencies _____________

View solution

Q. High-performance microwave FETs are fabricated from ___________

View solution

Q. Gallium arsenide MESFETs are advantageous than Silicon FETs.

View solution

Q. The PIN-FET hybrid receivers are a combination of ______________

View solution