Q. The high-impedance front-end amplifier provides a far greater bandwidth than the trans-impedance front-end.

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Q. A high-impedance amplifier has an effective input resistance of 4 MΩ. Find the maximum bandwidth that may be obtained without equalization if the total capacitance is 6 pF and total effective load resistance is 2 MΩ.

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Q. A high-input-impedance amplifier has following parameters (Total effective load resistance = 2 MΩ, Temperature = 300 K). Find the mean square thermal noise current per unit bandwidth for the high-impedance configuration.

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Q. The mean square thermal noise current in the trans-impedance configuration is _________ greater than that obtained with the high-input-impedance configuration.

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Q. The major advantage of the trans-impedance configuration over the high-impedance front end is ______________

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Q. The trans-impedance front end configuration operates as a __________ with negative feedback.

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Q. ____________ is the lowest noise amplifier device.

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Q. FET device has extremely high input impedance greater than _________

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Q. The properties of a bipolar transistor are superior to the FET.

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Q. Bipolar transistor is more useful amplifying device than FET at frequencies _____________

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Q. High-performance microwave FETs are fabricated from ___________

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Q. Gallium arsenide MESFETs are advantageous than Silicon FETs.

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Q. The PIN-FET hybrid receivers are a combination of ______________

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Q. PIN-FET hybrid receiver is designed for use at a transmission rate of _____________

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Q. It is difficult to achieve higher transmission rates using conventional __________

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Q. Which receiver can be fabricated using PIN-FET hybrid approach?

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Q. A silicon p-i-n photodiode utilized with the amplifier and the receiver is designed to accept data at a rate of ___________

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Q. What is usually required by FETs to optimize the figure of merit?

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Q. How many design considerations are considered while determining the receiver performance?

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Q. FET preamplifiers provide higher sensitivity than the Si-bipolar device.

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