Q. _________________ APDs are recognized for their high gain-bandwidth products.

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Q. APDs do not operate at signal wavelengths between 1.3 and 1.6 μm.

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Q. How many circuits are present in an equivalent circuit for the digital optical fiber receiver?

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Q. __________ compensates for distortion of the signal due to the combined transmitter, medium and receiver characteristics.

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Q. ____________ is also known as frequency-shaping filter.

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Q. The phase frequency response of the system should be ____________ in order to minimize inter-symbol interference.

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Q. Noise contributions from the sources should be minimized to maximize the receiver sensitivity.

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Q. How many amplifier configurations are frequently used in optional fiber communication receivers?

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Q. How many receiver structures are used to obtain better receiver characteristics?

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Q. The high-impedance front-end amplifier provides a far greater bandwidth than the trans-impedance front-end.

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Q. A high-impedance amplifier has an effective input resistance of 4 MΩ. Find the maximum bandwidth that may be obtained without equalization if the total capacitance is 6 pF and total effective load resistance is 2 MΩ.

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Q. A high-input-impedance amplifier has following parameters (Total effective load resistance = 2 MΩ, Temperature = 300 K). Find the mean square thermal noise current per unit bandwidth for the high-impedance configuration.

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Q. The mean square thermal noise current in the trans-impedance configuration is _________ greater than that obtained with the high-input-impedance configuration.

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Q. The major advantage of the trans-impedance configuration over the high-impedance front end is ______________

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Q. The trans-impedance front end configuration operates as a __________ with negative feedback.

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Q. ____________ is the lowest noise amplifier device.

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Q. FET device has extremely high input impedance greater than _________

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Q. The properties of a bipolar transistor are superior to the FET.

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Q. Bipolar transistor is more useful amplifying device than FET at frequencies _____________

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Q. High-performance microwave FETs are fabricated from ___________

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