Question

In a CE amplifier drives a low load resistance directly the result will be

a.

overloading of amplifier

b.

underloading of amplifier

c.

overloading or underloading of amplifier depending on circuit

d.

none of the above

Answer: (a).overloading of amplifier

Interact with the Community - Share Your Thoughts

Uncertain About the Answer? Seek Clarification Here.

Understand the Explanation? Include it Here.

Q. In a CE amplifier drives a low load resistance directly the result will be

Similar Questions

Explore Relevant Multiple Choice Questions (MCQs)

Q. For high frequencies a capacitor like

Q. In an amplifier the voltage gain is the ratio of

Q. A typical value of gm for a FET is about 25 μs.

Q. A transistor has two p-n junctions. The batteries should be connected such that

Q. The value of parameter re used in re transistor model

Q. Assertion (A): In a full wave rectifier output the lowest ac component is at twice the input frequency

Reason (R): In a full wave rectifier, the output waveform consists of half sinusoids

Q. An op-amp has zero gain for common mode inputs. Then CMRR =

Q. Assertion (A): Negative feedback reduces the bandwidth of an amplifier

Reason (R): Negative feedback stabilizes the gain of an amplifier

Q. A 12 kHz pulse wave-form is amplified by a circuit having an Upper cut-off frequency of 1 MHz. The minimum input pulse width that can be accurately reproduced is

Q. Feedback factor may be less or more than 1.

Q. An RC oscillator uses

Q. The main advantage of CMOS circuit is

Q. Ac signals are given to both inverting and non-inverting terminals of an op-amp. When will the output maximum

Q. The input voltage for starting oscillations in an oscillator is caused by

Q. The current flowing in a certain P-N junction at room temperature is 2 x 10¯⁷ Amp. When a large reverse biased voltage is applied. Calculate the current flowing when 0.1 volts is applied.

Q. In a CE amplifier

Q. The voltage gain of an amplifier without and with feedback are 100 and 20. The negative feedback is

Q. Calculate the conductivity of pure silicon at room temperature when the concentration of carriers is 1.6 x 10¹ᴼ per cm³. Take μe = 1500 cm²/V-sec, μh = 500 cm²/V-sec at room temperature,

Q. A potential of 7 V is applied to a silicon diode. A resistance of 1 kΩ is also connected in series. If the diode is forward biased, the current in the circuit is

Q. In a voltage regulated power supply the zener operates in the breakdown region when (Vin is input voltage and Vz is zener breakdown voltage)

Recommended Subjects

Are you eager to expand your knowledge beyond Electronics and Communication Engineering? We've handpicked a range of related categories that you might find intriguing.

Click on the categories below to discover a wealth of MCQs and enrich your understanding of various subjects. Happy exploring!