Q. Feedback factor may be less or more than 1.

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Q. An RC oscillator uses

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Q. The main advantage of CMOS circuit is

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Q. Ac signals are given to both inverting and non-inverting terminals of an op-amp. When will the output maximum

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Q. The input voltage for starting oscillations in an oscillator is caused by

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Q. The current flowing in a certain P-N junction at room temperature is 2 x 10¯⁷ Amp. When a large reverse biased voltage is applied. Calculate the current flowing when 0.1 volts is applied.

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Q. In a CE amplifier

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Q. The voltage gain of an amplifier without and with feedback are 100 and 20. The negative feedback is

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Q. Calculate the conductivity of pure silicon at room temperature when the concentration of carriers is 1.6 x 10¹ᴼ per cm³. Take μe = 1500 cm²/V-sec, μh = 500 cm²/V-sec at room temperature,

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Q. A potential of 7 V is applied to a silicon diode. A resistance of 1 kΩ is also connected in series. If the diode is forward biased, the current in the circuit is

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Q. In a voltage regulated power supply the zener operates in the breakdown region when (Vin is input voltage and Vz is zener breakdown voltage)

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Q. The parameter h11 for CB circuit is higher than that for CE circuit.

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Q. Assertion (A): In CE amplifier the emitter is at ground potential for ac signals

Reason (R): A CE amplifier has near unity voltage gain

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Q. An oscillator requires an amplifier

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Q. A full wave bridge diode rectifier uses diodes having forward resistance of 50 ohms each. The load resistance is also 50 ohms. The voltage regulations is

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Q. The disadvantage of direct coupled amplifiers is

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Q. A transistor has a power rating of 8 W for a case temperature of 25°C. If derating factor is 30 mW/°C, the power rating for 55°C, case temperature is

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Q. An ideal power supply has

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Q. In a self bias circuit for CE amplifier, the emitter resistance is made three times the original value. The collector current will

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Q. A P-channel MOSFET operating in the enhancement mode is characterized by Vt = - 4 V and IDQ = - 10 mA, when VGSQ = - 5.5 V, what will be VGSQ if IDQ = -15 mA and ID, on = - 16 mA

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