Q. In a biased limiter the clipping level can be adjusted by adjusting the voltage of battery.

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Q. One input terminal of high gain comparator circuit is connected to ground and a sinusoidal voltage is applied to the other input. The output of comparator will be

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Q. 3N 200 is a

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Q. The A.C. resistance of the emitter diode will be

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Q. For a transistor amplifier with self biasing network, the following components are used. R1 = 4 kΩ, R2 = 4 kΩ, RC = 1 kΩ. The approximate value of the stability factor 'S' will be

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Q. The gate electrode in the FET corresponds to the

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Q. The properties of JFET resemble those of

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Q. Assertion (A): Transformer coupling has the disadvantage of the weight of transformer and Saturation of core

Reason (R): Transformer coupling is very suitable for impedance matching

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Q. A Hartley oscillator is used for generation

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Q. Astable multivibrator has

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Q. Most small signal transistors are

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Q. A FET is a better clapper than a BJT because it has

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Q. The input gate current of FET is closer to

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Q. When a 1 V increase in gate voltage changes the drain current 10 mA in an FET, its gm equals

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Q. In a P-N-P junction transistor as compared to base region is more heavily doped so that

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Q. In every practical oscillator the loop gain is slightly more than unit and amplitude of oscillations is limited by

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Q. Which of the following is not valid in case of FETs?

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Q. When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The common base short circuit current gain a for the transistor is

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Q. In a transistor which of the following region is very lightly doped and is very thin?

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Q. The properties of FETs closely resemble those of a

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