Analog Electronics MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Analog Electronics, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Analog Electronics MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Analog Electronics mcq questions that explore various aspects of Analog Electronics problems. Each MCQ is crafted to challenge your understanding of Analog Electronics principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Analog Electronics MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Analog Electronics. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Analog Electronics knowledge to the test? Let's get started with our carefully curated MCQs!

Analog Electronics MCQs | Page 29 of 103

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Q281.
Most small signal transistors are

a.

N-P-N, silicon, in a plastic package

b.

P-N-P, silicon, in a plastic package

c.

N-P-N, germanium in a metallic case

d.

P-N-P, germanium in a metallic case

Discuss
Answer: (a).N-P-N, silicon, in a plastic package
Q282.
A FET is a better clapper than a BJT because it has

a.

lower off-set voltage

b.

higher series ON resistance

c.

lower input current

d.

higher input impedance

Discuss
Answer: (a).lower off-set voltage
Q283.
The input gate current of FET is closer to

a.

few amperes

b.

few milli amperes

c.

few microamperes

d.

negligibly smaller value

Discuss
Answer: (d).negligibly smaller value
Q284.
When a 1 V increase in gate voltage changes the drain current 10 mA in an FET, its gm equals

a.

10 ฮผฮผ

b.

100 ฮผฮผ

c.

1000 ฮผฮผ

d.

10000 ฮผฮผ

Discuss
Answer: (d).10000 ฮผฮผ
Q285.
In a P-N-P junction transistor as compared to base region is more heavily doped so that

a.

leakage current is minimized

b.

recombination will be increased in the base region

c.

the flow across the base regional is only because of electrons

d.

the flow across the base region is mainly because of holes

Discuss
Answer: (d).the flow across the base region is mainly because of holes
Q286.
In every practical oscillator the loop gain is slightly more than unit and amplitude of oscillations is limited by

a.

magnitude of loop gain

b.

onset of non-linearity

c.

magnitude of gain

d.

ฮฒ

Discuss
Answer: (b).onset of non-linearity
Q287.
Which of the following is not valid in case of FETs?

a.

It has low voltage gain

b.

It has high input impedance

c.

It has fast switching time

d.

It is voltage controlled device

Discuss
Answer: (c).It has fast switching time
Q288.
When the emitter current of a transistor is changed by 1 mA, its collector current changes by 0.990 mA. The common base short circuit current gain a for the transistor is

a.

0.99

b.

1.01

c.

1.001

d.

0.990

Discuss
Answer: (a).0.99
Q289.
In a transistor which of the following region is very lightly doped and is very thin?

a.

Emitter

b.

Base

c.

Collector

d.

None of the above

Discuss
Answer: (b).Base
Q290.
The properties of FETs closely resemble those of a

a.

thermionic valve

b.

P-N-P transistor

c.

N-P-N transistor

d.

UJT

Discuss
Answer: (a).thermionic valve
Page 29 of 103