Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 80 of 82

Discover more Topics under Electronics and Communication Engineering

Q791.
Maximum rectification efficiency for a half wave rectifier is
Discuss
Answer: (d).40.6%
Q792.
For a semiconductor, the conductivity is a function of the products of the number of charge carriers and their mobilites. As result, if the temperature of a slab of intrinsic silicon increases, how does its conductivity vary?
Discuss
Answer: (b).Increases
Q793.
In a junction transistor, the collector cut-off current 'ICB0' reduces considerably by doping the
Discuss
Answer: (a).emitter with high level of impurity
Discuss
Answer: (b).reducing the switching time dissipation
Q795.
The first dominant pole encountered in the frequency response of a compensated op-amp is approximately at
Discuss
Answer: (a).5 Hz
Q796.
As compared to bipolar junction transistor, a FET
Discuss
Answer: (d).all of the above
Q797.
For a P-N diode, the number of minority carriers crossing the junction depends on
Discuss
Answer: (c).rate of thermal generation of electron hole pairs
Q798.
In the sale of diamonds the unit of weight is carat. One carat is equal to
Discuss
Answer: (c).200 mg
Discuss
Answer: (d).decrease the I/P resistance and increase O/P resistance
Q800.
Assertion (A): A JFET can be used as a current source.

Reason (R): In beyond pinch off region the current in JFET is nearly constant.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A