Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 76 of 82

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Q751.
The forbidden energy gap between the valence band and conduction band will be least in case of
Discuss
Answer: (a).metals
Discuss
Answer: (c).excessive heat may damage the diode
Q753.
Assertion (A): Intrinsic semiconductor is an insulator at 0 K.

Reason (R): Fermi level in intrinsic semiconductor is in the centre of forbidden energy band.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q754.
A CMOS amplifier when compared to an N-channel. MOSFET, has the advantage of
Discuss
Answer: (a).higher cut off frequency
Q755.
Dynamic resistance of diode is dv/di
Discuss
Answer: (a).True
Q756.
The presence of some holes in an intrinsic semiconductor at room temperature is due to
Discuss
Answer: (d).thermal energy
Discuss
Answer: (a).positive charges
Q758.
Assertion (A): Silicon is less sensitive to changes in temperature than germanium.

Reason (R): It is more difficult to produce minority carriers in silicon than in germanium.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q759.
The number of protons in a silicon atom is
Discuss
Answer: (c).14
Discuss
Answer: (c).its O/P Impedance is low and input impedance is high