Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 71 of 82

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Discuss
Answer: (c).drain current and VDS for different values of VGS
Discuss
Answer: (a).high thermal conductivity and high melting point
Q703.
A JFET behaves as a constant current source when
Discuss
Answer: (d).VGS is more than pinch off voltage
Q704.
The electron and hole concentration in a intrinsic semiconductor are ni and Pi respectively when doped with a P type material, these change to n and P, respectively. Then
Discuss
Answer: (d).nP = ni Pi
Q705.
The energy to cause thermionic emission is supplied by heating the cathode.
Discuss
Answer: (a).True
Q706.
Assertion (A): In an n-p-n transistor as the electrons enter the collector region, they are accelerated towards the collector terminal.

Reason (R): Emitter base junction in BJT is forward biased.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q707.
Assertion (A): In reverse biased p-n junction, the reverse saturation current is nearly constant if the reverse voltage is less than critical value.

Reason (R): The total reverse current is sum of reverse saturation current and surface leakage current.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Discuss
Answer: (c).9.1 x 10¯³¹ kg
Discuss
Answer: (d).is a forward voltage below which the current is very small
Discuss
Answer: (c).50 Hz in the dc output of half wave and 100 Hz in the dc output of full wave