Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 67 of 82

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Discuss
Answer: (c).the forbidden energy gap in silicon is higher than that in germanium
Q662.
If E is electric field intensity, the current density due to field emission is proportional to
Discuss
Answer: (b).E^2
Q663.
When a high voltage reference is required it is advantageous to use two or more zener diodes in series to allow
Discuss
Answer: (d).all of the above
Q664.
Assertion (A): When p-n junction is forward biased, steady current flows.

Reason (R): When a p-n junction is forward biased, free electrons cross the junction from n to p and holes from p to n.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q665.
The equivalent circuit of an ideal diode is
Discuss
Answer: (c).a switch
Discuss
Answer: (a).Maximum collector current
Q667.
Assertion (A): The frequency of light used for photoelectric emission is high.

Reason (R): As per Einstein's equation 0.5 mv² < hf - Uw.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (d).all of the above
Q669.
When a diode is forward biased, the diode current is
Discuss
Answer: (a).high
Q670.
At room temperature, the current in the, intrinsic semiconductor is due to
Discuss
Answer: (d).holes and electrons