Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 63 of 82

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Q621.
The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 10¹โถ/m³. If after doping, the number of majority carriers is 5 x 10²แดผ/m³. The minority carrier density is
Discuss
Answer: (a).4.5 x 10¹¹/m³
Q622.
A diode is operating in forward region and the forward voltage and current are v = 3 + 0.3 sin ฯ‰t (volts) and i = 5 + 0.2 sin ฯ‰t (mA). The average power dissipated is
Discuss
Answer: (b).about 15 mW
Discuss
Answer: (a).Holes exist in conductors as well as semiconductors
Discuss
Answer: (b).wave length of incident radiation is less than threshold value
Q625.
The reverse saturation current of a diode does not depend on temperature.
Discuss
Answer: (b).False
Q626.
In a piezoelectric crystal, application of a mechanical stress would produce
Discuss
Answer: (c).electric polarization in the crystal
Discuss
Answer: (b).is less than 1 but more than 0.9
Q628.
The amount of photoelectric emission current depends on the frequency of incident light.
Discuss
Answer: (b).False
Discuss
Answer: (b).the width of depletion layer decreases
Q630.
The carriers of n channel JFET are
Discuss
Answer: (d).free electrons