Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 58 of 82

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Q571.
Typical value of reverse current in a semiconductor diode is
Discuss
Answer: (d).0.1 ฮผA
Q572.
Which of the following element has four valence electrons?
Discuss
Answer: (c).Both (a) and (b) above
Discuss
Answer: (c).depletion layer between emitter and base is thin and that between base and collector is thick
Q574.
In standard TTL, the 'totem pole' stage refers to
Discuss
Answer: (c).the O/P buffer
Discuss
Answer: (a).is nearly equal to density of acceptor atoms
Q576.
In order to achieve good stabilization in potential divider method current I1 through R1 and R2 should be
Discuss
Answer: (d).I1 > 10 IB
Q577.
A sample of N type semiconductor has electron density of 6.25 x 10โธ/cm² at 300 K. If the intrinsic concentration of carriers in this sample is 2.5 x 10¹³/cm³ at this temperature, the hole density works out to be
Discuss
Answer: (b).10โธ/cm³
Discuss
Answer: (a).increases the electrical resistivity of iron
Discuss
Answer: (c).has two stable state
Discuss
Answer: (b).control of output current by input voltage