Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 60 of 82

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Q591.
Assertion (A): In intrinsic semiconductors, the charge concentration increases with temperature.

Reason (R): At higher temperatures, the forbidden energy gap in semiconductors is lower.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q592.
Covalent bond energy in Germanium is approximately
Discuss
Answer: (c).7.4 eV
Discuss
Answer: (d).1.6 x 10¯¹โน joule
Q594.
Resistivity of electrical conductors is most affected by
Discuss
Answer: (b).temperature
Discuss
Answer: (a).electrical and thermal conductivities
Q596.
Holes and electrons move in opposite directions.
Discuss
Answer: (a).True
Discuss
Answer: (b).germanium power transistor
Q598.
The function off an oxide layer in an IC device is to

1. mask against diffusion or ion implantation
2. insulate the surface electrically
3. increase the melting point of Si
4. produce a chemically stable protective layer
Discuss
Answer: (d).4, 1, 2
Q599.
The passage of current in an electrolyte is due to the movement of
Discuss
Answer: (d).ions
Q600.
In a CE bipolar transistor operating in active region, collector current is independent of
Discuss
Answer: (a).VCE