Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 62 of 82

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Q611.
Assertion (A): In p-n-p transistor collector current is termed negative.

Reason (R): In p-n-p transistor holes are majority carriers.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Discuss
Answer: (b).green portion of spectrum
Discuss
Answer: (a).silicon diodes
Q614.
The inductance of a single layer solenoid of 10 turns is 5 ฮผH. Which one of the following is the correct value of inductance when the number of turns is 20 and the length is doubled.
Discuss
Answer: (a).10 ฮผH
Discuss
Answer: (c).is increased under reverse bias
Q616.
Forbidden energy gap in germanium at 0 K is about
Discuss
Answer: (d).0.78 eV
Discuss
Answer: (c).lightly doped semiconductor
Q618.
For a NPN bipolar transistor, what is the main stream of current in the base region?
Discuss
Answer: (b).Diffusion of holes
Q619.
Assertion (A): A VMOS can handle much larger current than other field effect transistors.

Reason (R): In a VMOS the conducting channel is very narrow.
Discuss
Answer: (c).A is true but R is false
Q620.
In monolithic ICs, all the components are fabricated by
Discuss
Answer: (a).diffusion process