Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 57 of 82

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Discuss
Answer: (b).reduce recombination rate
Q562.
In a solar cell, the photovoltaic voltages is the voltage at which the resultant current is
Discuss
Answer: (b).zero
Q563.
The forbidden energy gap between the valence band and conduction band will be wide in case of
Discuss
Answer: (d).insulators
Q564.
At 0 K the forbidden energy gap in intrinsic semi conductor is about
Discuss
Answer: (c).1 eV
Discuss
Answer: (b).decrease as the operating frequency increase
Q566.
If 100 V is the peak voltage across the secondary of the transformer in a half-wave rectifier (without any filter circuit), then the maximum voltage on the reverse-biased diode is
Discuss
Answer: (b).141.4 V
Discuss
Answer: (d).power amplifier converts a part of I/P d.c. power into a.c. power
Q568.
In p type semiconductor holes are majority carriers.
Discuss
Answer: (a).True
Q569.
Due to the formation of Schottky defects the density of the crystal
Discuss
Answer: (c).decreases slightly
Q570.
The band gap of silicon at 300K is
Discuss
Answer: (b).1.10 eV