Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 1 of 82

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Q1.
In the circuit of figure the function of resistor R and diode D are

a.

to limit the current and to protect LED against over voltage

b.

to limit the voltage and to protect LED against over current

c.

to limit the current and protect LED against reverse breakdown voltage

d.

none of the above

Discuss
Answer: (c).to limit the current and protect LED against reverse breakdown voltage
Q2.
The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification.

a.

AB

b.

BC

c.

CD

d.

BD

Discuss
Answer: (b).BC
Q3.
From the given circuit below, we can conclude that.

a.

BJT is pnp

b.

BJT is npn

c.

transistor is faulty

d.

not possible to determined

Discuss
Answer: (c).transistor is faulty
Q4.
Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10¯โธ amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V.

a.

4.983 V, 0.017 V

b.

- 4.98 V, - 0.017 V

c.

0.17 V, 4.983 V

d.

- 0.017 V, - 4.98 V

Discuss
Answer: (b).- 4.98 V, - 0.017 V
Q5.
As per Einstein's equation, the velocity of emitted electron in photoelectric emission is given by the equation

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Q6.
Discrete transistors T1 and T2 having maximum collector current rating of 0.75 amp are connected in parallel as shown in the figure, this combination is treated as a single transistor to carry a total current of 1 ampere, when biased with self bias circuit. When the circuit is switched on, T1 draws 0.55 amps and T2 draws 0.45 amps. If the supply is kept on continuously, ultimately it is very likely that

a.

Both T1, and T2 get damaged

b.

Both T1, and T2 will be safe

c.

T1 Will get damaged and T2 will be safe

d.

T2 will get damaged and T1, will be safe

Discuss
Answer: (c).T1 Will get damaged and T2 will be safe
Q7.
In given figure a silicon diode is carrying a constant current of 1 mA. When the temperature of the diode is 20°C, VD is found to be 700 mV. If the temperature rises to 40°C, VD becomes approximately equal to

a.

747 mV

b.

660 mV

c.

680 mV

d.

700 mV

Discuss
Answer: (a).747 mV
Q8.
The current through a PN Junction diode with v volts applied to the P region to the N region, where (Iโ‚€ is the reverse saturation current to the diode, m the ideality factor, k the Boltzmann constant, T the absolute temperature and q the magnitude of charge on an electron) is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (b).B
Q9.
In a P-type semiconductor, the conductivity due to holes (= ฯƒP) is equal to e = charge of hole, ฮผP = hole mobility, P = hole concentration,

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (c).C
Q10.
The collector to emitter cutoff current (ICE0) of a transmitter is related to collector to base cut off current (ICB0) as

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (c).C
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