Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 10 of 82

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Q91.
A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10-34 J sec.
Discuss
Answer: (a).2.26 eV
Discuss
Answer: (b).sharp breakdown occurs at a certain reverse voltage
Q93.
In a bipolar transistor which current is largest
Discuss
Answer: (c).emitter current
Q94.
The v-i characteristics of a FET is shown in figure. In which region is the device biased for small signal amplification
Discuss
Answer: (b).BC
Q95.
In p-n-p transistor the current IE has two components viz. IEP due to injection of holes from p-region to n-region and IE due to injection of electrons from n-region to p-region. Then
Discuss
Answer: (b).IEp >> IEn
Q96.
In an n channel JFET, the gate is
Discuss
Answer: (b).p type
Discuss
Answer: (b).intensity of incident radiation
Q98.
Assertion (A): A p-n junction has high resistance in reverse direction.

Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q99.
The drain characteristics of JFET in operating region, are
Discuss
Answer: (b).almost flat
Discuss
Answer: (b).the forbidden energy gap in silicon and germanium decrease