Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 10 of 82

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Q91.
Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.
Reason (R): High reverse voltage causes Avalanche effect.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (c).has higher reverse saturation current and lower cut in voltage
Discuss
Answer: (b).band to band transition dominants over impurity ionization
Discuss
Answer: (a).towards positive terminal
Discuss
Answer: (c).low resistivity
Q96.
In a p type material the Fermi level is 0.3 eV above valence band. The concentration of acceptor atoms is increased. The new position of Fermi level is likely to be
Discuss
Answer: (b).0.28 eV above valence band
Q97.
In an n-p-n transistor, the majority carriers in the base are
Discuss
Answer: (a).electrons
Q98.
An LED has a rating of 2 V and 10 mA. It is used along with 6V battery. The range of series resistance is
Discuss
Answer: (d).400 ฮฉ and above
Q99.
The number of doped regions in PIN diode is
Discuss
Answer: (b).2
Q100.
A silicon (PN) junction at a temperature of 20°C has a reverse saturation current of 10 pico Ampere. The reverse saturation current at 40°C for the same bias is approximately.
Discuss
Answer: (b).40 pA