Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 14 of 82

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Q131.
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q132.
Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.

Reason (R): High reverse voltage causes Avalanche effect.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q133.
If ฮฑac for transistor is 0.98 then ฮฒac is equal to
Discuss
Answer: (b).49
Q134.
Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.

Reason (R): The addition of donor impurity creates additional energy levels below conduction band.
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q135.
A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10¯³โด J sec.
Discuss
Answer: (a).2.26 eV
Q136.
Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.

Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q137.
At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called
Discuss
Answer: (d).incremental conductance of diode
Discuss
Answer: (b).The maximum velocity of emission varies with the intensity of light
Discuss
Answer: (a).reverse bias exceeds the limiting value
Q140.
In the fabrication of n-p-n transistor in an IC, the buried layer on the P-type substrate is
Discuss
Answer: (c).used to reduce the parasitic capacitance