Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 14 of 82

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Q131.
The mean free path of conduction electrons in copper is about 4 x 10¯โธ m. For a copper block, find the electric field which can give, on an average, 1 eV energy to a conduction electron

a.

2.62 x 10โท V/m

b.

2.64 x 10โท V/m

c.

2.5 x 10โท V/m

d.

2.58 x 10โท V/m

Discuss
Answer: (c).2.5 x 10โท V/m
Q132.
When a p-n-p transistor is properly biased to operate in active region the holes from emitter.

a.

diffuse through base into collector region

b.

recombine with electrons in base

c.

recombine with electrons in emitter

d.

none of the above

Discuss
Answer: (a).diffuse through base into collector region
Q133.
Assertion (A): Silicon is preferred over germanium in manufacture of semiconductor devices.

Reason (R): Forbidden gap in silicon is more than that in germanium.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q134.
Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode.

Reason (R): When a diode is reverse biased surface leakage current flows.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (d).A is false but R is true
Q135.
At room temperature a semiconductor material is

a.

perfect insulator

b.

conductor

c.

slightly conducting

d.

any of the above

Discuss
Answer: (c).slightly conducting
Q136.
The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of

a.

1.5 V

b.

2.5 V

c.

3.5 V

d.

4.5 V

Discuss
Answer: (b).2.5 V
Q137.
Which of these has degenerate p and n materials?

a.

Zener diode

b.

PIN diode

c.

Tunnel diode

d.

Photo diode

Discuss
Answer: (c).Tunnel diode
Q138.
A Schottky diode clamp is used along with switching BJT for

a.

reducing the power dissipation

b.

reducing the switching time

c.

increasing the value of ฮฒ

d.

reducing the base current

Discuss
Answer: (b).reducing the switching time
Q139.
In a piezoelectric crystal, applications of a mechanical stress would produce

a.

plastic deformation of the crystal

b.

magnetic dipoles in the crystal

c.

electrical polarization in the crystal

d.

shift in the Fermi level

Discuss
Answer: (c).electrical polarization in the crystal
Q140.
What is the correct sequence of the following step in the fabrication of a monolithic, Bipolar junction transistor? Emitter diffusionBase diffusionBuried layer formationE pi-layer formation Select the correct answer using the codes given below:

a.

3, 4, 1, 2

b.

4, 3, 1, 2

c.

3, 4, 2, 1

d.

4, 3, 2, 1

Discuss
Answer: (d).4, 3, 2, 1
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