Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

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Electronic Devices and Circuits MCQs | Page 14 of 82

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Q131.
Assertion (A): The conductivity of p type semiconductor is higher than that of intrinsic semiconductor.

Reason (R): The addition of donor impurity creates additional energy levels below conduction band.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Q132.
A particular green LED emits light of wavelength 5490, Å, the energy bandgap of the semiconductor material used there is .. h = 6.6 x 10¯³โด J sec.

a.

2.26 eV

b.

1.98 eV

c.

1.17 eV

d.

0.74 eV

Discuss
Answer: (a).2.26 eV
Q133.
Assertion (A): The reverse saturation current in a semiconductor diode is 4nA at 20°C and 32 nA at 50°C.

Reason (R): The reverse saturation current in a semiconductor diode doubles for every 10°C rise in temperature.

a.

Both A and R are true and R is correct explanation of A

b.

Both A and R are true but R is not a correct explanation of A

c.

A is true but R is false

d.

A is false but R is true

Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q134.
The value of a in a transistor

a.

is always equal to 1

b.

is less than 1 but more than 0.9

c.

is about 0.4

d.

is about 0.1

Discuss
Answer: (b).is less than 1 but more than 0.9
Q135.
The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 1016/m³. If after doping, the number of majority carriers is 5 x 1020/m³. The minority carrier density is

a.

4.5 x 1011/m³

b.

3.33 x 104/m³

c.

5 x 1020/m³

d.

3 x 10-5/m³

Discuss
Answer: (a).4.5 x 1011/m³
Q136.
Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10-8 amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V.

a.

4.983 V, 0.017 V

b.

- 4.98 V, - 0.017 V

c.

0.17 V, 4.983 V

d.

- 0.017 V, - 4.98 V

Discuss
Answer: (b).- 4.98 V, - 0.017 V
Q137.
An one sided abrupt junction has 10²¹/m³ of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10¯¹โน C, ฮตr =16, ฮตโ‚€ = 8.87 x 10¯¹² F/m) is

a.

0.036 nm

b.

0.6 ฮผm

c.

3 mm

d.

1.5 mm

Discuss
Answer: (b).0.6 ฮผm
Q138.
n-type semiconductors

a.

are negatively charged

b.

are produced when indium is added as impurity to germanium

c.

are produced when phosphorus is added as impurity to silicon

d.

none of the above

Discuss
Answer: (c).are produced when phosphorus is added as impurity to silicon
Q139.
In all metals

a.

conductivity decreases with increase in temperature

b.

current flow by electrons as well as by holes

c.

resistivity decreases with increase in temperature

d.

the gap between valence and conduction bands is small

Discuss
Answer: (a).conductivity decreases with increase in temperature
Q140.
The voltage across a zener diode

a.

is constant in forward direction

b.

is constant in reverse direction

c.

is constant in both forward and reverse directions

d.

none of the above

Discuss
Answer: (b).is constant in reverse direction
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