Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

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Electronic Devices and Circuits MCQs | Page 14 of 82

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Q131.
The intrinsic carrier concentration of silicon sample at 300 K is 1.5 x 1016/m³. If after doping, the number of majority carriers is 5 x 1020/m³. The minority carrier density is
Discuss
Answer: (a).4.5 x 1011/m³
Q132.
Two identical silicon diodes D1 and D2 are connected back to back shown in figure. The reverse saturation current Is of each diode is 10-8 amps and the breakdown voltage VBr is 50 v. Evaluate the voltages VD1 and VD2 dropped across the diodes D1 and D2 assuming KT/q to be 25 m V.
Discuss
Answer: (b).- 4.98 V, - 0.017 V
Q133.
An one sided abrupt junction has 10²¹/m³ of dopants on the lightly doped side, zero bias voltage and a built-in potential of 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10¯¹โน C, ฮตr =16, ฮตโ‚€ = 8.87 x 10¯¹² F/m) is
Discuss
Answer: (b).0.6 ฮผm
Q134.
Hall coefficient KH and charge density ฯ are related as

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q135.
In p type semiconductors the conduction due to holes ( = ฯƒp ) is (where e = charge on hole, ฮผp is hole mobility and ฯ is hole concentration)

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (c).C
Q136.
The Ebers-moll equation for IE in CB configuration is given by

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (d).D
Q137.
The small signal input impedance of a transistor whose output is shorted for the measuring signal is

a.

A

b.

B

c.

C

d.

D

Discuss
Answer: (a).A
Q138.
The first and the last critical frequency of an RC driving point impedance function must respectively by
Discuss
Answer: (a).a zero and a pole
Discuss
Answer: (b).concentration gradient of charge carrier
Q140.
The conductivity of materials found in nature ranges from 10โน ohm¯¹m¯¹ to nearly 10¹โธ ohm¯¹ m¯¹ from this it can be concluded that the conductivity of silicon in ohm¯¹ cm¯¹ will be nearly
Discuss
Answer: (d).0.5 x 10¯³