Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 16 of 82

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Discuss
Answer: (b).the width of depletion layer decreases
Q152.
The carriers of n channel JFET are
Discuss
Answer: (d).free electrons
Q153.
The depletion layer around p-n junction in JFET consists of
Discuss
Answer: (c).immobile charges
Q154.
Junction temperature is always the same as room temperature.
Discuss
Answer: (b).False
Q155.
Assertion (A): A p-n junction has high resistance in reverse direction.
Reason (R): When a reverse bias is applied to p-n junction, the width of depletion layer increases.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Q156.
Assertion (A): When a high reverse voltage is applied to a p-n junction the diode breaks down.

Reason (R): High reverse voltage causes Avalanche effect.
Discuss
Answer: (a).Both A and R are true and R is correct explanation of A
Discuss
Answer: (b).Both A and R are true but R is not a correct explanation of A
Discuss
Answer: (a).ferromagnetic materials
Q159.
High purity copper is obtained by
Discuss
Answer: (c).electrolytic refining
Q160.
Photo electric emission can occur only if the frequency of light is more than threshold frequency.
Discuss
Answer: (a).True