Electronic Devices and Circuits MCQs

Welcome to our comprehensive collection of Multiple Choice Questions (MCQs) on Electronic Devices and Circuits, a fundamental topic in the field of Electronics and Communication Engineering. Whether you're preparing for competitive exams, honing your problem-solving skills, or simply looking to enhance your abilities in this field, our Electronic Devices and Circuits MCQs are designed to help you grasp the core concepts and excel in solving problems.

In this section, you'll find a wide range of Electronic Devices and Circuits mcq questions that explore various aspects of Electronic Devices and Circuits problems. Each MCQ is crafted to challenge your understanding of Electronic Devices and Circuits principles, enabling you to refine your problem-solving techniques. Whether you're a student aiming to ace Electronics and Communication Engineering tests, a job seeker preparing for interviews, or someone simply interested in sharpening their skills, our Electronic Devices and Circuits MCQs are your pathway to success in mastering this essential Electronics and Communication Engineering topic.

Note: Each of the following question comes with multiple answer choices. Select the most appropriate option and test your understanding of Electronic Devices and Circuits. You can click on an option to test your knowledge before viewing the solution for a MCQ. Happy learning!

So, are you ready to put your Electronic Devices and Circuits knowledge to the test? Let's get started with our carefully curated MCQs!

Electronic Devices and Circuits MCQs | Page 16 of 82

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Discuss
Answer: (b).concentration gradient of charge carrier
Q152.
The conductivity of materials found in nature ranges from 10โน ohm¯¹m¯¹ to nearly 10¹โธ ohm¯¹ m¯¹ from this it can be concluded that the conductivity of silicon in ohm¯¹ cm¯¹ will be nearly
Discuss
Answer: (d).0.5 x 10¯³
Q153.
At any point on the v-i characteristics of a semiconductor diode, the slope of v-i characteristics is called
Discuss
Answer: (d).incremental conductance of diode
Discuss
Answer: (b).The maximum velocity of emission varies with the intensity of light
Q155.
Assertion (A): A decrease in temperature increases the reverse saturation current in a p-n diode.

Reason (R): When a diode is reverse biased surface leakage current flows.
Discuss
Answer: (d).A is false but R is true
Q156.
At room temperature a semiconductor material is
Discuss
Answer: (c).slightly conducting
Q157.
The threshold voltage of an n-channel enhancement mode MOSFET is 0.5 when the device is biased at a gate voltage of 3V. Pinch off would occur at a drain voltage of
Discuss
Answer: (b).2.5 V
Q158.
Which of these has degenerate p and n materials?
Discuss
Answer: (c).Tunnel diode
Discuss
Answer: (b).reducing the switching time
Q160.
In a piezoelectric crystal, applications of a mechanical stress would produce
Discuss
Answer: (c).electrical polarization in the crystal